PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 7

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD38N02LT_2
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
V
GS(th)
(V)
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
I
junction temperature
I
charge; typical values
-60
D
D
0
= 0.25 mA; V
= 25 A; V
I
T
V
D
j
DS
= 25 A
= 25 C
= 10 V
DS
0
= 10 V
DS
10
= V
GS
60
max
min
typ
20
120
Q
G
003aab713
T
j
(nC)
( C)
03al82
Rev. 02 — 2 February 2007
180
30
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
D
10
10
10
10
-3
-4
-5
-6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
0.4
Q
min
DS
GS1
= 5 V
I
Q
D
GS
Q
GS2
0.8
Q
PHD38N02LT
G(tot)
typ
Q
GD
1.2
© NXP B.V. 2007. All rights reserved.
V
003aaa508
GS
max
03an65
(V)
1.6
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