PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 2

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHD38N02LT_2
Product data sheet
Type number
PHD38N02LT
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Ordering information
Limiting values
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads
(one lead cropped)
Conditions
25 C
25 C
T
T
T
T
T
T
mb
mb
mb
mb
mb
mb
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
Rev. 02 — 2 February 2007
T
T
j
j
175 C
175 C; R
GS
GS
Figure 1
= 5 V; see
= 5 V; see
p
p
GS
= 20 k
10 s; see
10 s
Figure 2
Figure 2
N-channel TrenchMOS logic level FET
Figure 3
and
3
PHD38N02LT
Min
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2007. All rights reserved.
Max
20
20
44.7
31.6
179
57.6
+175
+175
44.7
179
12
Version
SOT428
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C