PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 10
![N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415233/sot023_3d_sml.gif)
PMV28UN
Manufacturer Part Number
PMV28UN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMV28UN.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV28UN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PMV28UNEA
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT23 (TO-236AB)
PMV28UN
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
3
b p
TO-236AB
All information provided in this document is subject to legal disclaimers.
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
Rev. 1 — 26 May 2011
e
w
B
0.95
M
e
1
JEITA
scale
B
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
20 V, 3.3 A N-channel Trench MOSFET
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
PMV28UN
c
© NXP B.V. 2011. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23
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