PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 2

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMV28UN
Product data sheet
Type number
PMV28UN
Type number
PMV28UN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
% = placeholder for manufacturing site code
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Marking codes
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Package
Name
TO-236AB
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 26 May 2011
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
KU%
amb
amb
= 25 °C
= 100 °C
[1]
p
20 V, 3.3 A N-channel Trench MOSFET
≤ 10 µs
[1]
[1]
[2]
[1]
[1]
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
-
PMV28UN
© NXP B.V. 2011. All rights reserved.
2
Version
SOT23
Max
20
8
3.3
2.2
13
380
520
1800
150
150
150
0.6
.
°C
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
A
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