PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 3

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV28UN
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I
10
10
der
D
120
10
10
80
40
–1
–2
1
0
2
10
−75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) t
(5) DC; T
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
= single pulse
p
p
p
p
Limit R
= 100 µs
= 1 ms
= 10 ms
= 100 ms
−25
sp
amb
DSon
= 25 °C
= 25 °C; drain mounting pad 6 cm
= V
25
DS
/I
D
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
1
T
j
(°C)
175
Rev. 1 — 26 May 2011
2
Fig 2.
I
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
10
20 V, 3.3 A N-channel Trench MOSFET
−25
25
(1)
(2)
(3)
(4)
(5)
(6)
V
DS
75
(V)
PMV28UN
© NXP B.V. 2011. All rights reserved.
125
017aaa124
017aaa227
T
j
(°C)
175
10
2
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