PMV28UN NXP Semiconductors, PMV28UN Datasheet - Page 7

• Manufacturer Part Number: PMV28UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV28UN
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
1.2
0.8
0.4
0.0
15
10
5
0
–60
0.0
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
0.5
0
DSon
DS
= V
1.0
60
(1)
(2)
(3)
(2)
GS
(1)
120
1.5
All information provided in this document is subject to legal disclaimers.
V
017aaa234
017aaa236
T
GS
(1)
j
(°C)
(V)
(2)
180
2.0
Rev. 1 — 26 May 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
1.8
1.4
1.0
0.6
10
3
2
10
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
20 V, 3.3 A N-channel Trench MOSFET
0
GS
1
= 0 V
60
10
(1)
(2)
(3)
PMV28UN
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa235
T
017aaa237
j
(V)
(°C)
180
10
2
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