BLF369 NXP Semiconductors, BLF369 Datasheet - Page 2

General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz

BLF369

Manufacturer Part Number
BLF369
Description
General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
Manufacturer
NXP Semiconductors
Datasheet

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2. Pinning information
3. Ordering information
4. Limiting values
BLF369_4
Product data sheet
1.3 Applications
I
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF369
Symbol
V
V
T
T
stg
j
DS
GS
Pulsed applications up to 500 MHz
Communication transmitter applications in the HF/VHF/UHF band under specific
conditions
Industrial applications up to 500 MHz under special conditions
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 04 — 19 February 2009
Description
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
[1]
Simplified outline
Conditions
Multi-use VHF power LDMOS transistor
1
3
2
4
5
Min
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
BLF369
3
4
Max
65
+13
+150
200
Version
SOT800-2
1
2
sym117
Unit
V
V
C
C
5
2 of 17

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