BLF369 NXP Semiconductors, BLF369 Datasheet - Page 5

General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz

BLF369

Manufacturer Part Number
BLF369
Description
General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
Manufacturer
NXP Semiconductors
Datasheet

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7. Application information
Table 7.
T
[1]
BLF369_4
Product data sheet
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
h
= 25 C unless otherwise specified.
t
p
= 2 ms; = 10 %.
RF performance in a common-source 225 MHz test circuit
[1]
7.1 CW
Fig 3.
f
(MHz)
225
f
225
1
= 225; f
CW power gain and drain efficiency as a function of output power; typical values
2
= 225.1
(dB)
Rev. 04 — 19 February 2009
G
P
22
20
18
16
0
V
(V)
32
32
-
DS
100
I
(A)
2
2
-
Dq
1.0 500
1.0 -
200
P
(W)
500
L
300
Multi-use VHF power LDMOS transistor
G
D
P
P
(W)
-
500
-
L(PEP)
400
001aae501
P
L
G
(dB)
> 17
> 18
> 18
(W)
p
500
70
50
30
10
(%)
(%)
> 55
> 43
> 50
D
D
© NXP B.V. 2009. All rights reserved.
BLF369
IMD3
(dBc)
-
< 24
-
(dB)
-
1
-
G
5 of 17
p

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