BLF369 NXP Semiconductors, BLF369 Datasheet - Page 9

• Manufacturer Part Number: BLF369
• Description: General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
Table 8.
For test circuit, see
BLF369_4
Product data sheet
Component
B1
B2
C1
C2, C3
C4, C7
C5, C8
C6, C9
C10, C11, C13, C14
C12, C15
Fig 13. BLF369 electromigration (I
Years
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
10
10
10
10
10
10
1
6
5
4
3
2
0
TTF (0.1 % failure fraction); best estimate values.
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)
j
j
j
j
j
j
j
j
j
j
j
List of components
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
7.6 Reliability
Figure
Description
semi rigid coax
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
ceramic capacitor
14,
Figure 15
(7)
6
(1)
(8)
D
, total device)
and
(2)
(9)
Figure
(3)
(10)
Rev. 04 — 19 February 2009
12
16.
(4)
(11)
(5)
Value
25 ; 120 mm
25 ; 56 mm
91 pF
56 pF
100 pF
15 nF
220 F
220 pF
15 nF
(6)
18
Multi-use VHF power LDMOS transistor
1 / .
[1]
[1]
[1]
[1]
[1]
Remarks
EZ90-25-TP
EZ90-25-TP
24
I
dc
(A)
© NXP B.V. 2009. All rights reserved.
001aae504
BLF369
30
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