BLS6G3135S-120 NXP Semiconductors, BLS6G3135S-120 Datasheet - Page 2

• Manufacturer Part Number: BLS6G3135S-120
• Description: 120 W LDMOS power transistor intended for radar applications in the 3
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G3135-120_6G3135S-120_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G3135-120 (SOT502A)
1
2
3
BLS6G3135S-120 (SOT502B)
1
2
3
Type number
BLS6G3135-120
BLS6G3135S-120 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
BLS6G3135-120; BLS6G3135S-120
Package
Name
-
Rev. 02 — 29 May 2008
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
[1]
[1]
LDMOS S-Band radar power transistor
Simplified outline
1
2
1
2
3
Min
-
-
-
3
0.5
65
Symbol
© NXP B.V. 2008. All rights reserved.
Max
60
+13
7.2
+150
225
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
Unit
V
V
A
C
C
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