BLS6G3135S-120 NXP Semiconductors, BLS6G3135S-120 Datasheet - Page 4

• Manufacturer Part Number: BLS6G3135S-120
• Description: 120 W LDMOS power transistor intended for radar applications in the 3
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS6G3135-120_6G3135S-120_2
Product data sheet
Fig 2. Power gain and drain efficiency as functions of
(dB)
G
p
13
11
9
7
5
3
V
P
frequency; typical values
3
DS
L
= 120 W.
= 32 V; I
7.1 Ruggedness in class-AB operation
Dq
3.2
= 100 mA; t
Table 8.
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
f
GHz
3.1
3.2
3.3
3.4
3.5
Fig 1. Definition of transistor impedance
p
= 300 s; = 10 %;
3.4
Typical impedance
DS
G
D
p
f (GHz)
BLS6G3135-120; BLS6G3135S-120
= 32 V; I
001aag823
3.6
Rev. 02 — 29 May 2008
Dq
50
40
30
20
10
0
(%)
= 100 mA; P
D
Z
2.7
3.3
4.2
5.2
5.7
S
Fig 3. Power gain as a function of load power; typical
j5.4
j4.7
j4.4
j4.8
j6.2
gate
Z
(dB)
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
G
S
L
p
14
10
= 120 W; t
6
2
V
values
0
DS
= 32 V; I
001aaf059
LDMOS S-Band radar power transistor
Z
drain
L
40
p
Dq
= 300 s; = 10 %.
= 100 mA; t
Z
5.9
4.5
3.5
2.7
2.0
80
L
p
= 300 s; = 10 %.
j5.9
j6.2
j6.0
j5.6
j5.2
(1)
120
© NXP B.V. 2008. All rights reserved.
(3)
P
001aag824
L
(W)
(2)
160
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