BLS6G3135S-120 NXP Semiconductors, BLS6G3135S-120 Datasheet - Page 8

• Manufacturer Part Number: BLS6G3135S-120
• Description: 120 W LDMOS power transistor intended for radar applications in the 3
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT502A
BLS6G3135-120_6G3135S-120_2
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502A
0.186
0.135
4.72
3.43
H
A
U 2
A
A
12.83
12.57
0.505
0.495
b
0.006
0.003
0.15
0.08
c
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
BLS6G3135-120; BLS6G3135S-120
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
q
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 29 May 2008
1
2
0.045
0.035
1.14
0.89
0
F
3
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
M
0.210
0.170
5.33
4.32
C
10 mm
L
M
C
0.133
0.123
3.38
3.12
p
L
p
B
F
0.067
0.057
LDMOS S-Band radar power transistor
1.70
1.45
Q
w 1
M
27.94
1.100
A
q
M
B
PROJECTION
34.16
33.91
1.345
1.335
EUROPEAN
M
U 1
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
0.25
0.01
w 1
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
99-12-28
03-01-10
0.51
0.02
w 2
E
SOT502A
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