STM8S207RB STMicroelectronics, STM8S207RB Datasheet - Page 69

• Manufacturer Part Number: STM8S207RB
• Description: Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S207RB

• Max Fcpu: up to 24 MHz, 0 wait states @ fCPU≤ 16 MHz
• Program: up to 128 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
• Data: up to 2 Kbytes true data EEPROM; endurance 300 kcycles
• Ram: up to 6 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S207xx, STM8S208xx
10.3.6
Table 37.
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
3. Guaranteed by design.
Symbol
I
I
lkg ana
t
lkg(inj)
V
R
R
V
V
I
lkg
hys
, t
IH
pu
IL
F
Input low level
voltage
Input high level
voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10% - 90%)
Input leakage
current,
analog and digital
Analog input
leakage current
Leakage current in
adjacent I/O
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
Parameter
(1)
(2)
V
V
Fast I/Os
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
Fast I/Os
Load = 20 pF
Standard and high sink I/Os
Load = 20 pF
V
V
Injection current ±4 mA
DD
DD
SS
SS
≤
≤
= 5 V
= 5 V, V
V
V
Conditions
IN
IN
≤
≤
IN
V
V
Doc ID 14733 Rev 12
DD
= V
DD
SS
DD
0.7 x V
and T
Min
-0.3
30
DD
A
unless otherwise specified. All
Typ
700
55
Electrical characteristics
V
0.3 x V
DD
±250
125
125
20
±1
35
Max
+ 0.3 V
80
±1
(3)
(2)
(2)
(3)
(2)
(2)
DD
Unit
mV
kΩ
µA
nA
µA
ns
V
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