FSBH0270NY_F116 Fairchild Semiconductor, FSBH0270NY_F116 Datasheet - Page 6

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FSBH0270NY_F116

Manufacturer Part Number
FSBH0270NY_F116
Description
The highly integrated FSBH-series consists of an integrated current-mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V SenseFET
Manufacturer
Fairchild Semiconductor
Datasheet
© 2010 Fairchild Semiconductor Corporation
FSBH0F70A_F116, FSBH0170/0270/0370_F116 • Rev. 1.0.1
SenseFET Section
Electrical Characteristics
V
Symbol
R
DD
BV
t
t
C
C
D(OFF)
C
I
DS(ON)
D(ON)
DSS
=15V and T
t
OSS
RSS
t
ISS
R
F
DSS
Drain-Source
Breakdown Voltage
Zero-Gate-Voltage
Drain Current
Drain-Source On-
State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
A
=25C unless otherwise specified.
Parameter
(12)
V
V
V
V
V
f=1MHz
V
f=1MHz
V
f=1MHz
V
V
V
V
DS
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
=700V, V
=700V, V
=560V, V
=10V, I
=0V, V
=0V, V
=0V, V
=350V, I
=350V, I
=350V, I
=350V, I
DS
DS
DS
D
=0.5A
D
D
D
D
=25V,
=25V,
=25V,
GS
GS
GS
=1.0A
=1.0A
=1.0A
=1.0A
=0V
=0V
=0V, T
Condition
C
6
=125C
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
FSBH0F70A_F116
FSBH0170_F116
FSBH0270_F116
FSBH0370_F116
Continued on the following page…
Min.
700
14.00
Typ.
8.80
6.00
4.00
10.0
17.0
12.0
20.0
11.2
33.0
30.0
55.0
28.2
162
250
550
315
3.8
9.0
9.5
18
25
38
47
19
15
34
42
10
25
32
4
www.fairchildsemi.com
Max.
19.00
11.00
120.0
7.20
4.75
15.0
26.0
24.0
29.0
34.0
50.0
33.0
76.0
70.0
67.0
200
211
325
715
410
5.7
50
24
33
50
61
48
18
40
78
94
30
60
74
Unit
μA
pF
pF
pF
ns
ns
ns
ns
V

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