BUT11AF Fairchild Semiconductor, BUT11AF Datasheet
BUT11AF
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BUT11AF Summary of contents
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... T =25 C unless otherwise noted C Test Condition : BUT11F I = 100mA BUT11AF : BUT11F V = 850V BUT11AF V = 1000V 9V BUT11F BUT11AF I = 2.5A 0. BUT11F BUT11AF I = 2.5A 0. 250V 2. 0. 100 L T =25 C unless otherwise noted ...
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... Figure 4. Reverse Biased Safe Operating Area BUT11AF 10 BUT11F 100 1000 (sat [A], COLLECTOR CURRENT C BUT11AF BUT11F 400 600 800 1000 1200 V [V], COLLECTOR-EMITTER VOLTAGE 100 125 150 175 C], CASE TEMPERATURE C Figure 6. Power Derating Rev. A2, August 2001 ...
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... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A2, August 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...