FDP150N10A_F102 Fairchild Semiconductor, FDP150N10A_F102 Datasheet - Page 4

• Manufacturer Part Number: FDP150N10A_F102
• Manufacturer: Fairchild Semiconductor

FDP150N10A_F102 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Eoss vs. Drain to Source Voltage
1.10
1.08
1.04
1.00
0.96
0.92
0.01
300
100
0.1
1.5
1.2
0.9
0.6
0.3
0.0
10
-100
1
0.1
0
Operation in This Area
is Limited by R
vs. Temperature
-50
vs. Case Temperature
V
T
DS
V
J
, Junction Temperature
DS
25
, Drain to Source Voltage
*Notes:
, Drain-Source Voltage [V]
1. T
2. T
3. Single Pulse
1
0
C
J
DS(on)
= 175
= 25
o
50
o
C
50
C
10
100
*Notes:
[
1. V
2. I
75
o
100
10ms
C
1ms
10
[
D
150
DC
GS
]
V
= 250
μ
μ
]
s
s
= 0V
100 200
μ
A
200
100
(Continued)
4
2.5
2.0
1.5
1.0
0.5
Figure 8. On-Resistance Variation
60
50
40
30
20
10
Figure 12. Unclamped Inductive
Figure 10. Maximum Drain Current
-100
0
20
10
25
1
0.01
R
θ
JC
STARTING T
-50
50
= 1.6
T
T
0.1
J
C
vs. Temperature
, Junction Temperature
t
o
, Case Temperature
Switching Capability
AV
C/W
, TIME IN AVALANCHE [ms]
75
0
If R = 0
t
If R = 0
t
AV
AV
J
= 150
= (L)
= (L/R)In
1
(
I
AS
100
o
50
)
C
[(
/
(
1.3*RATED BV
I
AS
*R
STARTING T
)
/
(
10
1.3*RATED BV
100
125
[
o
C
*Notes:
[
DSS
]
1. V
2. I
o
V
C
-V
GS
D
150
150
]
DD
100
GS
J
)
= 50A
DSS
= 25
= 10V
= 10V
-V
www.fairchildsemi.com
DD
o
)
C
+1
200
175
]
1000