FCP25N60N_F102 Fairchild Semiconductor, FCP25N60N_F102 Datasheet - Page 3

• Manufacturer Part Number: FCP25N60N_F102
• Manufacturer: Fairchild Semiconductor

FCP25N60N_F102 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
350
300
250
200
150
100
10
10
10
10
10
10
Figure 1. On-Region Characteristics
0.3
10
1
0.05 0.1
5
4
3
2
1
0
0.1
0
C
C
C
V
*Note:
GS
iss
oss
rss
1. V
2. f = 1MHz
= 15V
= C
= C
= C
10V
GS
V
8V
6V
4V
V
Drain Current and Gate Voltage
gs
gd
ds
DS
DS
= 0V
+ C
20
+ C
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
gd
D
gd
, Drain Current [A]
C
C
C
(
rss
iss
oss
C
ds
= shorted
1
40
*Notes:
10
1. 250
2. T
V
GS
C
)
= 10V
= 25
μ
*Note: T
s Pulse Test
o
C
60
V
100
GS
C
10
= 25
= 20V
o
C
600
30
80
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
100
100
Figure 6. Gate Charge Characteristics
10
10
10
1
1
8
6
4
2
0
0.4
0
2
V
10
SD
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
150
V
0.6
Q
GS
g
o
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
C
150
20
4
o
V
V
V
C
DS
DS
DS
= 120V
= 300V
= 480V
-55
0.8
30
o
C
*Notes:
25
25
1. V
2. 250
*Note: I
*Notes:
1. V
2. 250
o
o
C
C
40
DS
6
GS
μ
= 20V
μ
s Pulse Test
= 0V
s Pulse Test
1.0
D
= 12.5A
50
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1.2
60
8