BSN20W NXP Semiconductors, BSN20W Datasheet - Page 2

• Manufacturer Part Number: BSN20W
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a 3 pin plastic SOT323 SMD package.
QUICK REFERENCE DATA
Note
1. Device mounted on a printed-circuit board.
2000 Mar 10
V
V
I
R
P
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Thin and thick film circuits
General purpose fast switching applications.
DS
GSth
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
SYMBOL
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CAUTION
PARAMETER
2
PINNING - SOT323
handbook, halfpage
T
note 1
amb
CONDITIONS
Marking code: M8- = made in Hong Kong; M8t = made in Malaysia
(or Bangkok).
PIN
25 C;
Top view
1
1
2
3
Fig.1 Simplified outline and symbol.
3
50
1.8
80
15
200
2
SYMBOL
MAX.
MAM356
g
s
d
g
Product specification
gate
source
drain
V
V
mA
mW
DESCRIPTION
d
s
BSN20W
UNIT