BSN20W NXP Semiconductors, BSN20W Datasheet - Page 3

• Manufacturer Part Number: BSN20W
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
2000 Mar 10
V
V
I
I
P
T
T
R
V
V
I
I
R
C
C
C
Switching times
t
t
SYMBOL
SYMBOL
SYMBOL
D
DM
j
DSS
GSS
on
off
stg
j
DS
GSO
tot
(BR)DSS
GSth
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
I
V
I
D
D
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 80 mA
= 80 mA
= 10 V; I
= 5 V; I
= 2.5 V; I
= 0; V
= 0; V
= 0; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= V
= 0; V
= 20 V; V
DS
D
3
open drain
T
note 1
DS
DS
DS
CONDITIONS
; I
DS
amb
= 10 A
D
D
D
= 80 mA
D
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 40 V
= 1 mA
= 80 mA
DS
= 10 mA
CONDITIONS
CONDITIONS
25 C; note 1
DD
DD
= 0
= 20 V;
= 20 V;
50
0.4
MIN.
65
65
MIN.
VALUE
625
8
14
18
8
7
2
2
5
TYP.
50
80
300
200
+150
+150
Product specification
20
MAX.
BSN20W
1.8
1
15
20
30
15
15
5
5
10
MAX.
100
UNIT
K/W
V
V
mA
mA
mW
C
C
UNIT
V
V
nA
pF
pF
pF
ns
ns
UNIT
A