BSN20W NXP Semiconductors, BSN20W Datasheet - Page 4

• Manufacturer Part Number: BSN20W
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Mar 10
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
Device mounted on a printed-circuit board.
T
j
(mW)
(mA)
= 25 C.
P tot
I D
300
200
100
500
400
300
200
100
Fig.4 Output characteristics; typical values.
0
0
0
0
Fig.2 Power derating curve.
50
4
100
V
GS
8
= 10 V
150
2.5 V
7 V
5 V
4 V
3 V
V DS (V)
T amb (
MRA782
MDA183
o
C)
200
12
4
handbook, halfpage
handbook, halfpage
V
(1) C
(2) C
(3) C
Fig.3
V
GS
DS
(mA)
I D
(pF)
Fig.5 Transfer characteristics; typical values.
= 0; T
500
400
300
200
100
= 10 V; T
C
30
20
10
iss
oss
rss
0
0
.
0
.
0
.
Capacitance as a function of drain-source
voltage; typical values.
j
= 25 C; f = 1 MHz.
j
= 25 C.
2
5
10
4
15
6
Product specification
20
8
BSN20W
V DS (V)
V GS (V)
(1)
(2)
(3)
MRA781
MRA783
25
10