BSN20W NXP Semiconductors, BSN20W Datasheet - Page 5

• Manufacturer Part Number: BSN20W
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Mar 10
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
T
(1) V
(2) V
(3) V
Fig.6
Typical V
Fig.8
R DSon
k
j
( )
= 25 C.
=
1.2
1.1
0.9
0.8
0.7
24
16
------------------------------------- -
V
k
GS
GS
GS
8
0
GSth
1
V
50
1
GSth
= 2.5 V.
= 5 V.
= 10 V.
GSth
Drain-source on-state resistance as a
function of drain current; typical values.
Temperature coefficient of gate-source
threshold voltage.
at 25 C
at T
at 1 mA.
j
0
10
(1)
(2)
(3)
50
10
2
100
I D (mA)
T j (
MRA785
MDA163
o
C)
150
10
3
5
handbook, halfpage
handbook, halfpage
R DSon
V
Fig.7
Typical R
(1) I
(2) I
Fig.9
k
DS
( )
=
= 0.1 V; T
80
60
40
20
1.6
1.2
0.8
0.4
---------------------------------------- -
R
D
D
k
0
2
DSon
= 10 mA; V
= 100 mA; V
R
50
0
DSon
DSon
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
Temperature coefficient of drain-source
on-state resistance.
at 25 C
at T
j
at 100 mA / 10 V.
= 25 C.
2
GS
j
GS
0
= 2.5 V.
= 10 V.
4
50
6
Product specification
100
8
(1)
(2)
BSN20W
T j (
V GS (V)
MRA784
MDA162
o
C)
150
10