PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet
PHB119NQ06T
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PHB119NQ06T Summary of contents
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... It is not possible to make connection to pin 2 of the SOT404 package. PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 Standard level threshold Motors, lamps, solenoids DC-to-DC converters 200 W ...
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... C; pulsed Figure pulsed unclamped inductive load 0.1 ms starting Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Min - = Figure 2 and 3 - Figure Figure ...
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... I der (%) 80 40 150 200 der Fig 2. Normalized continuous drain current Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET 100 150 ------------------- = 100 function of mounting base temperature ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 13176 Product data Conditions Figure 4 vertical in still air mounted on a printed-circuit board; minimum footprint Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Min Typ - - - ...
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... Source-drain diode V source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 9397 750 13176 Product data PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Conditions I = 250 mA ...
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... Fig 6. Transfer characteristics: drain current as a 03ap32 7 160 240 I D (A) a Fig 8. Normalized drain-source on-state resistance Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET > DSon 175 ( and 175 C ...
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... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET -1 -2 min typ max - gate-source voltage. ...
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... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 05 May 2004 PHP/PHB119NQ06T 03ap36 (nC and © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 60 ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT404 ISSUE DATE 99-06-25 01-02-12 ...
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... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040505 - Product data (9397 750 13176). 9397 750 13176 Product data PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 05 May 2004 Rev. 01 — 05 May 2004 PHP/PHB119NQ06T PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET N-channel TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 05 May 2004 Document order number: 9397 750 13176 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET ...