PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet

no-image

PHB119NQ06T

Manufacturer Part Number
PHB119NQ06T
Description
N-channel Trenchmos Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHB119NQ06T
Manufacturer:
NXP
Quantity:
51 000
Part Number:
PHB119NQ06T
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
2. Pinning information
Table 1:
[1]
Pin Description
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Pinning - SOT78 (TO-220AB) and SOT404 (D
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
Simplified outline
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PHP/PHB119NQ06T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 05 May 2004
SOT78 (TO-220AB)
Standard level threshold
Motors, lamps, solenoids
DC-to-DC converters
V
P
DS
tot
1 2
mb
200 W
55 V
3
MBK106
2
-PAK), simplified outline and symbol
SOT404 (D
1
mb
2
3
2
-PAK)
Very low on-state resistance.
Uninterruptible power supplies
General industrial applications.
I
R
D
DSon
MBK116
75 A
7.1 m .
Symbol
MBB076
g
Product data
d
s

Related parts for PHB119NQ06T

PHB119NQ06T Summary of contents

Page 1

... It is not possible to make connection to pin 2 of the SOT404 package. PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 Standard level threshold Motors, lamps, solenoids DC-to-DC converters 200 W ...

Page 2

... C; pulsed Figure pulsed unclamped inductive load 0.1 ms starting Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Min - = Figure 2 and 3 - Figure Figure ...

Page 3

... I der (%) 80 40 150 200 der Fig 2. Normalized continuous drain current Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET 100 150 ------------------- = 100 function of mounting base temperature ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 13176 Product data Conditions Figure 4 vertical in still air mounted on a printed-circuit board; minimum footprint Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Min Typ - - - ...

Page 5

... Source-drain diode V source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 9397 750 13176 Product data PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Conditions I = 250 mA ...

Page 6

... Fig 6. Transfer characteristics: drain current as a 03ap32 7 160 240 I D (A) a Fig 8. Normalized drain-source on-state resistance Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET > DSon 175 ( and 175 C ...

Page 7

... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET -1 -2 min typ max - gate-source voltage. ...

Page 8

... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 05 May 2004 PHP/PHB119NQ06T 03ap36 (nC and © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 60 ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 05 May 2004 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT404 ISSUE DATE 99-06-25 01-02-12 ...

Page 11

... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040505 - Product data (9397 750 13176). 9397 750 13176 Product data PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 12

... TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 05 May 2004 Rev. 01 — 05 May 2004 PHP/PHB119NQ06T PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET N-channel TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 13

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 05 May 2004 Document order number: 9397 750 13176 PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET ...

Related keywords