PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 8

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13176
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
= 25 C and 175 C; V
75
50
25
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
175 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03ap34
1.2
Rev. 01 — 05 May 2004
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 25 A; V
8
6
4
2
0
charge; typical values.
N-channel TrenchMOS™ standard level FET
0
I D = 25 A
T j = 25 C
PHP/PHB119NQ06T
DD
= 14 V and 44 V
20
14 V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
40
V DD = 44 V
Q G (nC)
03ap36
60
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