PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 7

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13176
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V
I
V
D
GS(th)
(V)
GS
= 1 mA; V
junction temperature.
5
4
3
2
1
0
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 4
10 3
10 2
120
10 -1
03aa32
T
j
( C)
180
Rev. 01 — 05 May 2004
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
T
I
10
D
10
10
10
10
10
j
= 25 C; V
-1
-2
-3
-4
-5
-6
V DS (V)
gate-source voltage.
N-channel TrenchMOS™ standard level FET
0
C rss
C oss
C iss
03ap35
PHP/PHB119NQ06T
DS
10 2
= 5 V
2
min
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
4
max
V
GS
03aa35
(V)
6
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