PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 3

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13176
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
(A)
10 3
10 2
mb
P
(%)
I D
120
der
10
der
80
40
1
function of mounting base temperature.
0
= 25 C; I
0
1
=
---------------------- -
P
Limit R DSon = V DS / I D
tot 25 C
P
tot
DM
50
is single pulse; V
100%
100
GS
= 10 V.
150
T
03aa16
mb
( C)
200
Rev. 01 — 05 May 2004
DC
10
Fig 2. Normalized continuous drain current as a
I
120
I der
(%)
der
80
40
0
function of mounting base temperature.
N-channel TrenchMOS™ standard level FET
0
=
-------------------
I
D 25 C
PHP/PHB119NQ06T
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
10 ms
1 s
t p = 10 s
1 ms
100 ms
150
T mb ( C)
03ap30
03ap37
10 2
200
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