PBSS302PD NXP Semiconductors, PBSS302PD Datasheet

no-image

PBSS302PD

Manufacturer Part Number
PBSS302PD
Description
40 V Pnp Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS302PD
40 V, 4 A PNP low V
Rev. 02 — 6 December 2007
Ultra low collector-emitter saturation voltage V
4 A continuous collector current capability I
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 600 mA
= 6 A;
1 ms
C
CEsat
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Typ
-
-
-
55
Product data sheet
Max
75
40
4
15
Unit
V
A
A
m

Related parts for PBSS302PD

PBSS302PD Summary of contents

Page 1

... PBSS302PD PNP low V Rev. 02 — 6 December 2007 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features I Ultra low collector-emitter saturation voltage continuous collector current capability peak current ...

Page 2

... T amb Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat Simplified outline Symbol Marking code C9 Min ...

Page 3

... P tot (mW) 1200 (1) 800 (2) (3) (4) 400 standard footprint 2 3 Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 10 % and pulse width t 10 ms. p 006aaa270 75 125 175 amb 2 2 © ...

Page 4

... Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 02 — 6 December 2007 PBSS302PD PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ [ ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302PD_2 Product data sheet Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat 006aaa272 (s) p 006aaa273 ...

Page 6

... 0 100 MHz C collector capacitance MHz E e 300 s; 0.02. p Rev. 02 — 6 December 2007 PBSS302PD PNP low V CEsat Min Typ = 0.5 A ...

Page 7

... Fig 6. Collector current as a function of 006aaa283 1.3 V BEsat (V) 0.9 0.5 0 (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat I (mA) = 400 0.4 0.8 1.2 1 amb collector-emitter voltage; typical values (1) (2) (3) 1 ...

Page 8

... I Fig 10. Collector-emitter saturation voltage as a 006aaa289 R CEsat ( ) (1) (2) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 02 — 6 December 2007 PBSS302PD PNP low V CEsat 1 ( ( ...

Page 9

... Fig 14. Test circuit for switching times PBSS302PD_2 Product data sheet (probe) oscilloscope 450 0 Bon Rev. 02 — 6 December 2007 PBSS302PD PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope ...

Page 10

... PBSS302PD_2 Product data sheet 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 ...

Page 11

... Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 0.45 1.45 4.45 msc423 © NXP B.V. 2007. All rights reserved. solder lands solder resist occupied area ...

Page 12

... Product data sheet Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat Change notice Supersedes - PBSS302PD_1 conditions amended 2 footprint amended - - © NXP B.V. 2007. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat © NXP B.V. 2007. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 6 December 2007 Document identifier: PBSS302PD_2 ...

Related keywords