PBSS302PD NXP Semiconductors, PBSS302PD Datasheet - Page 5

• Manufacturer Part Number: PBSS302PD
• Description: 40 V Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBSS302PD_2
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
3
2
1
1
10
3
2
1
10
FR4 PCB, mounting pad for collector 1 cm
FR4 PCB, mounting pad for collector 6 cm
5
duty cycle =
duty cycle =
5
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
4
4
10
10
3
3
2
2
10
10
Rev. 02 — 6 December 2007
2
2
10
10
1
1
1
1
40 V, 4 A PNP low V
10
10
PBSS302PD
CEsat
10
10
2
2
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa272
006aaa273
(s)
(s)
10
10
3
3
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