PBSS302PD NXP Semiconductors, PBSS302PD Datasheet - Page 7

• Manufacturer Part Number: PBSS302PD
• Description: 40 V Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBSS302PD_2
Product data sheet
Fig 5. DC current gain as a function of collector
Fig 7. Base-emitter voltage as a function of collector
V
(1) T
(2) T
(3) T
h
(V)
BE
FE
600
400
200
1.6
1.2
0.8
0.4
0
0
V
current; typical values
10
V
current; typical values
10
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V; T
= 100 C
= 25 C
= 55 C
1
1
amb
10
10
= 25 C
(1)
(2)
(3)
10
10
2
2
10
10
3
3
006aaa283
10
006aaa282
10
I
I
C
C
4
4
(mA)
(mA)
Rev. 02 — 6 December 2007
10
10
5
5
Fig 6. Collector current as a function of
Fig 8. Base-emitter saturation voltage as a function of
V
(1) T
(2) T
(3) T
BEsat
(A)
(V)
I
C
1.3
0.9
0.5
0.1
12
8
4
0
T
collector-emitter voltage; typical values
10
I
collector current; typical values
C
0
amb
amb
amb
amb
/I
B
1
40 V, 4 A PNP low V
= 20
= 25 C
= 55 C
= 25 C
= 100 C
1
0.4
10
(1)
(2)
(3)
0.8
10
2
PBSS302PD
1.2
I
B
CEsat
10
(mA) = 400
3
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
1.6
006aaa288
10
006aaa287
V
360
320
280
240
200
160
120
I
CE
80
40
C
4
(mA)
(V)
2.0
10
5
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