KSE13009L Fairchild Semiconductor, KSE13009L Datasheet

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KSE13009L

Manufacturer Part Number
KSE13009L
Description
Npn Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
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©2000 Fairchild Semiconductor International
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, Duty cycle 2% Pulse
V
V
V
I
I
I
P
T
T
I
h
V
V
C
f
t
t
t
C
CP
B
V
EBO
T
ON
STG
F
FE
J
STG
CBO
EBO
C
CE
BE
Symbol
ob
Symbol
CEO
CEO
(sat)
(sat)
(sus)
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSE13009L
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 5A, I
= 8A, I
= 12A, I
= 5A, I
= 8A, I
= 15,6
= - I
Test Condition
= 7V, I
= 5V, I
= 5V, I
= 10V , f = 0.1MHz
= 10V, I
=125V, I
B2
B
B
B
B
= 1.6A
B
= 1A
= 1.6A
= 1A
= 1.6A
C
C
C
= 3A
B
C
= 0
= 5A
= 8A
C
= 0
= 0.5A
= 8A
1.Base 2.Collector 3.Emitter
1
Min.
400
8
6
4
- 65 ~ 150
Value
700
400
130
150
12
24
6
9
Typ.
180
TO-3P
Max.
1.5
1.2
1.6
1.1
0.7
40
30
3
1
1
3
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
s
s
s

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KSE13009L Summary of contents

Page 1

... Output Capacitance ob f Current Gain Bandwidth Product T t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse test: PW 300 s, Duty cycle 2% Pulse ©2000 Fairchild Semiconductor International KSE13009L T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 10mA ...

Page 2

... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 t F 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2000 Fairchild Semiconductor International 0.1 0.01 0.1 10 100 Figure 2. Base-Emitter Saturation Voltage 10000 1000 100 10 0.1 100 1000 V =125V CC I =5I ...

Page 3

... Package Demensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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