MPC8358E Freescale Semiconductor, MPC8358E Datasheet - Page 14
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MPC8358E
Manufacturer Part Number
MPC8358E
Description
(MPC8358E / MPC8360E) PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
Manufacturer
Freescale Semiconductor
Datasheet
1.MPC8358E.pdf
(112 pages)
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Power Characteristics
14
MPC8360E/MPC8358E PowerQUICC™ II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 2
Notes:
1. The values do not include I/O supply power (OV
2. Typical power is based on a voltage of V
3. Thermal solutions will likely need to design to a value higher than typical power on the end application, T
4. Maximum power is based on a voltage of V
5. Maximum power is based on a voltage of V
6. Typical power is based on a voltage of V
7. Maximum power is based on a voltage of V
8. This frequency combination is only available for rev2.0 silicon.
9. This frequency combination is not available for rev2.0 silicon.
Notes:
1. The values do not include I/O supply power (OV
2. Typical power is based on a voltage of V
3. Thermal solutions will likely need to design to a value higher than typical power on the end application, T
4. Maximum power is based on a voltage of V
Frequency (MHz)
Frequency (MHz)
benchmark application.
power.
a junction T
application.
process, a junction T
application.
power.
Core
Core
667
266
400
J
= 105°C, and an artificial smoke test.
Frequency (MHz)
Frequency (MHz)
J
Table 4. MPC8360E TBGA Core Power Dissipation
= 70°C, and an artificial smoke test.
CSB
CSB
266
266
333
Table 5. MPC8358E TBGA Core Power Dissipation
Frequency (MHz)
Frequency (MHz)
DD
DD
DD
QUICC Engine
QUICC Engine
DD
DD
DD
DD
= 1.2 V or 1.3 V, a junction temperature of T
= 1.3 V, a junction temperature of T
= 1.2 V, a junction temperature of T
= 1.3 V for applications that use 667MHz(CPU)/500(QE) with WC process,
= 1.2 V, WC process, a junction T
= 1.3 V for applications that use 667MHz(CPU) or 500(QE) with WC
300
400
= 1.2 V, WC process, a junction T
500
DD
DD
, LV
, LV
DD
DD
, GV
, GV
DD
DD
Typical
Typical
) or AV
) or AV
4.1
4.5
6.1
DD
DD
. For I/O power values, see
. For I/O power values, see
Maximum
Maximum
J
J
J
4.5
5.0
J
6.8
1
= 70°C, and a Dhrystone benchmark
= 105°C, and a Dhrystone benchmark
= 105°C, and an artificial smoke test.
= 105°C, and an artificial smoke test.
(continued)
J
1
= 105°C, and a Dhrystone
Unit
Unit
W
W
W
Freescale Semiconductor
Table
Table
A
A
target, and I/O
target, and I/O
6.
6.
2, 3, 5, 9
Notes
2, 3, 4
2, 3, 4
Notes