HM-6518 Intersil Corporation, HM-6518 Datasheet

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HM-6518

Manufacturer Part Number
HM-6518
Description
1024 x 1 CMOS RAM
Manufacturer
Intersil Corporation
Datasheet
March 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• This Circuit is Processed in Accordance to MIL-STD-
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50 W Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output
Pinout
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
|
Copyright
©
Intersil Corporation 1999
GND
S1
A0
A1
A2
A3
A4
PIN
Q
E
W
A
E
S
D
Q
1
2
3
4
5
6
7
8
9
HM-6518/883
TOP VIEW
(CERDIP)
6-85
Address Input
Chip Enable
Write Enable
Chip Select
Data Input
Data Output
DESCRIPTION
HM-6518/883
Description
The HM-6518/883 is a 1024 x 1 static CMOS RAM
fabricated using self-aligned silicon gate technology.
Synchronous circuit design techniques are employed to
achieve high performance and low power operation.
On chip latches are provided for address and data outputs
allowing efficient interfacing with microprocessor systems.
The data output buffers can be forced to a high impedance
state for use in expanded memory arrays.
The HM-6518/883 is a fully static RAM and may be
maintained in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
Ordering Information
CERDIP
PACKAGE
18
17
16
15
14
13
12
11
10
VCC
S2
D
W
A9
A8
A7
A6
A5
-55
TEMP. RANGE
o
C to +125
1024 x 1 CMOS RAM
o
C
HM1-6518/883
NUMBER
PART
File Number
PKG. NO.
F18.3
2986.1

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HM-6518 Summary of contents

Page 1

... The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6518/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature ...

Page 2

... S2 NOTES: 1. All lines positive logic - active high. 2. Three-state buffers: A high output active. 3. Data latches: L high Latches on rising edge Address latches and gated decoders: Latch on falling edge of E and gate on falling edge of E. HM-6518/883 A 5 GATED ROW MATRIX 32 DECODER ...

Page 3

... NOTE measured with the component mounted on an evaluation PC board in free air. JA TABLE 1. HM-6518/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested PARAMETER SYMBOL Output Low Voltage ...

Page 4

... TABLE 2. HM-6518/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS Chip Enable (1) TELQV VCC = 4.5 and Access Time 5.5V Address Access (2) TAVQV VCC = 4.5 and Time 5.5V, Note 3 Chip Select (3) TSLQX VCC = 4.5 and Output Enable 5.5V Time (4) TWLQZ Write Enable VCC = 4.5 and Output Disable 5 ...

Page 5

... TABLE 3. HM-6518/883 ELECTRICAL PERFORMANCE SPECIFICATIONS PARAMETER SYMBOL Input Capacitance CI VCC = Open 1MHz, All Measure- ments Referenced to Device Ground Output Capacitance CO VCC = Open 1MHz, All Measure- ments Referenced to Device Ground NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters are characterized upon initial design and after major process and/or design changes ...

Page 6

... X NOTE: 1. Device selected only if both S1 and S2 are low, and deselected if either are high. In the HM-6518/883 read cycle the address information is latched into the on chip registers on the falling edge 0). Minimum address setup and hold time require- ments must be met. After the required hold time the addresses may change state without affecting device oper- ation ...

Page 7

... W line may remain low until all desired locations have been written. When this method is used, data setup and hold times must be referenced to the rising edge of E. Test Load Circuit DUT (NOTE 1) CL NOTE: 1. Test head capacitance includes stray and jig capacitance. HM-6518/883 TRUTH TABLE OUTPUTS ...

Page 8

... Burn-In Circuit NOTES: All resistors 47k 5 100kHz 10 F12 = F11 VCC = 5.5V 0.5V. VIH = 4.5V 10%. VIL = -0.2V to +0.4V 0.01 F Min. HM-6518/883 HM-6518/883 CERDIP VCC VCC F12 F11 ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HM-6518/883 GLASSIVATION: Type: SiO 2 Å Thickness: 8k WORST CASE CURRENT DENSITY: 5 1.342 x 10 A/cm HM-6518/883 E S1 VCC S2 GND 6-93 Å ...

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