2SK1772 Hitachi Semiconductor, 2SK1772 Datasheet - Page 3

• Manufacturer Part Number: 2SK1772
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
Symbol
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
fs
|
Min
30
—
—
1.0
—
—
0.6
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
0.4
0.6
1.0
85
65
20
10
15
40
30
1.2
30
Max
—
—
50
2.0
0.6
0.85
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
GS
GS
DS
DS
GS
GS
L
F
= 1 A, V
= 1 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 0.5 A
= 0.5 A
= 0.5 A
= 0.5 A
/dt = 50 A/ s
= 60
= 25 V, V
= 10 V*
= 10 V
= 16 V, V
= 10 V*
= 4 V*
= 0
= 10 V
1
GS
GS
1
1
DS
= 0
= 0,
GS
GS
DS
= 10 V
DS
= 0
2SK1772
= 0
= 0
= 0
3