2SK1772 Hitachi Semiconductor, 2SK1772 Datasheet - Page 5

• Manufacturer Part Number: 2SK1772
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
–40
0
0
Pulse test
V
V
Gate to Source Voltage
Drain to Source Saturation Voltage
Static Drain to Source on State
GS
GS
Case Temperature
Resistance vs. Temperature
0
vs. Gate to Source Voltage
= 10 V
= 4 V
2
40
4
80
I = 0.5 A, 1 A
D
6
Tc (°C)
1 A
I = 0.5 A
2 A
D
2 A
120
V
Pulse test
GS
8
0.5 A
1 A
2 A
(V)
160
10
0.05
5.0
2.0
1.0
0.5
0.2
0.1
0.5
0.2
0.1
10
0.02
0.05 0.1
5
2
1
Pulse test
Forward Transfer Admittance vs.
Static Drain to Source on State
0.05 0.1
Resistance vs. Drain Current
Drain Current
Drain Current
V
0.2
GS
Drain Current
= 4 V
10 V
Tc = 25°C
0.2
0.5
I
I
D
D
1
0.5
V
Pulse test
–25°C
(A)
(A)
75°C
DS
2
= 10 V
2SK1772
1.0
2.0
5
5