2SK1772 Hitachi Semiconductor, 2SK1772 Datasheet - Page 6

• Manufacturer Part Number: 2SK1772
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1772
6
500
200
100
50
40
30
20
10
50
20
10
0
0.02
5
V
I
D
DS
di/dt = 50 A/µs
V
Ta = 25°C
Reverse Drain Current
GS
= 1 A
Dynamic Input Characteristics
0.8
0.05 0.1
Body-Drain Diode Reverse
Gate Charge
= 0
V
DD
Recovery Time
1.6
= 5 V
V
DD
10 V
20 V
0.2
= 5 V
10V
20 V
2.4
Qg
0.5
V
(nc)
GS
I
3.2
DR
1.0
(A)
4.0
2.0
20
16
12
8
4
0
1000
500
200
100
100
50
20
10
0.02
10
5
1
0
Drain to Source Voltage
Typical Capacitance vs. Drain to
0.05 0.1
Switching Characteristics
Drain Current
10
Source Voltage
tf
20
tr
0.2
Ciss
Crss
Coss
I
30
td(off)
D
0.5
V
V
PW = 2 µs
duty 1 %
V
f = 1 MHz
(A)
GS
DD
GS
V
td(on)
DS
40
= 10 V
= 30 V
1.0
= 0
(V)
2.0
50