2SK2315 Hitachi Semiconductor, 2SK2315 Datasheet - Page 3

• Manufacturer Part Number: 2SK2315
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

5
4
3
2
1
0
1.6
1.2
0.8
0.4
0
Drain to Source Voltage
Typical Output Characteristics
Power vs. Temperature Derating
Ambient Temperature
2
50
3.5 V
10 V
5 V
4 V
4
V
GS
100
= 1.5 V
6
Ta = 25 °C
Pulse Test
2.5 V
3 V
2 V
V
150
DS
8
Ta (°C)
(V)
10
200
0.005
0.05
0.02
0.01
0.5
0.2
0.1
5
2
1
5
4
3
2
1
0.2
0
Drain to Source Voltage
Operation in
this area is
limited by R
Gate to Source Voltage
0.5 1
Maximum Safe Operation Area
Typical Transfer Characteristics
Tc = 75 °C
Ta = 25 °C
1 shot pulse
1
–25 °C
25 °C
2
DS(on)
2
5
10 20
V
Pulse Test
3
DS
100 µs
V
V
= 10 V
DS
GS
50 100 200
2SK2315
4
(V)
(V)
5
3