2SK2315 Hitachi Semiconductor, 2SK2315 Datasheet - Page 5

• Manufacturer Part Number: 2SK2315
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

1000
200
100
100
50
20
10
10
0.05 0.1
5
2
1
0
Drain to Source Voltage V
Switching Characteristics
10
Typical Capacitance vs.
Drain to Source Voltage
V
f = 1 MHz
Drain Current
GS
0.2
V
V
= 0
t
20
GS
DD
d(off)
t f
0.5
= 10 V, PW = 2 µs
= 30 V, duty < 1 %
Coss
Ciss
Crss
r t
30
I
1
D
t
(A)
d(on)
40
DS
2
(V)
50
5
100
80
60
40
20
0
5
4
3
2
1
0
V
Source to Drain Voltage
Pulse Test
DS
Dynamic Input Characteristics
10 V
2
0.4
Reverse Drain Current vs.
Gate Charge
Souece to Drain Voltage
V
DD
V
5 V
4
DD
0.8
= 50 V
25 V
10 V
= 50 V
25 V
10 V
V
6
GS
1.2
Qg (nc)
= 0
I
V
D
V
GS
8
1.6
= 2 A
SD
2SK2315
(V)
10
2.0
20
16
12
8
4
0
5