2SK2315 Hitachi Semiconductor, 2SK2315 Datasheet - Page 4

• Manufacturer Part Number: 2SK2315
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK2315
4
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Case Temperature
V
4
GS
0
Gate to Source Voltage
= 3 V
V
vs. Temperature
GS
8
40
= 10 V
I
12
D
Pulse Test
Ta = 25 °C
80
= 2 A
I
1 A
D
I
Tc
D
= 2 A
V
0.5 A
= 2 A
1 A
GS
16
120
0.5 A
(°C)
0.5 A
(V)
1 A
20
160
0.05
0.5
0.2
0.1
10
0.5
0.2
0.1
5
2
1
0.1
5
2
1
0.1
Static Drain to Source State Resistance
Forward Transfer Admittance vs.
Tc = –25 °C
Ta = 25 °C
Pulse Test
0.2
0.2
Drain Current I
25 °C
75 °C
Drain Current
vs. Drain Current
0.5
Drain Current
0.5
V
GS
1
1
= 3 V
10 V
V
Pulse Test
DS
2
D
I
2
D
(A)
= 10 V
(A)
5
5
10
10