MPSA77-D75Z Fairchild Semiconductor, MPSA77-D75Z Datasheet
MPSA77-D75Z
Manufacturer Part Number
MPSA77-D75Z
Description
Mpsa77 Pnp Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSA77-D75Z.pdf
(3 pages)
©2003 Fairchild Semiconductor Corporation
PNP Darlington Transistor
• This device is designed for applications requiring extremely high
• Sourced from process 61.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics *
f
P
R
R
C
CBO
EBO
T
Symbol
current gain at currents to 800mA.
FE
J
CES
CBO
EBO
(BR)CES
CE
BE
D
Symbol
, T
JC
JA
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Dandwidth Product
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
a
T
Parameter
=25 C unless otherwise noted
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
- Continuous
MPSA77
I
V
V
I
I
I
I
I
f = 100MHz
C
C
C
C
C
C
CB
EB
= -100 A, I
= -10mA, V
= -100mA, V
= -100mA, I
= -100mA, V
= -10mA, V
= -30V, I
= -10V, I
Test Condition
E
C
B
CE
CE
B
= 0
= 0
CE
CE
= 0
= -0.1mA
= -5.0V
= -5.0V
= -5.0V
= -5.0mA
-55 ~ +150
1. Emitter 2. Base 3. Collector
Value
1
-1.2
-60
-60
-10
10,000
10,000
Min.
100
-60
Max.
83.3
625
200
5.0
TO-92
Max.
-100
-100
-1.5
-2.0
Units
Rev. A, October 2003
mW/ C
Units
V
V
V
A
mW
C/W
C/W
C
Units
MHz
nA
nA
V
V
V
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MPSA77-D75Z Summary of contents
Page 1
... Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation MPSA77 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = -100 ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...