MPSA77 Fairchild Semiconductor, MPSA77 Datasheet

TRANSISTOR DARL PNP TO-92

MPSA77

Manufacturer Part Number
MPSA77
Description
TRANSISTOR DARL PNP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPSA77

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MPSA77FS

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MPSA77 Rev. B1
© 2009 Fairchild Semiconductor Corporation
MPSA77
PNP Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 800mA.
• Sourced from process 61.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
V
V
I
T
P
R
R
C
J
CES
CBO
EBO
D
Symbol
θJC
θJA
, T
Symbol
STG
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
T
a
=25°C unless otherwise noted
Parameter
T
a
1. Emitter 2. Base 3. Collector
=25°C unless otherwise noted
Parameter
1
- Continuous
1
TO-92
-55 ~ +150
Value
-1.2
-60
-60
-10
Max.
83.3
625
200
5.0
www.fairchildsemi.com
March 2009
Units
mW/°C
Units
°C
°C/W
°C/W
V
V
V
A
mW

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MPSA77 Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA © 2009 Fairchild Semiconductor Corporation MPSA77 Rev. B1 TO- Emitter 2. Base 3. Collector T =25°C unless otherwise noted a Parameter - Continuous T =25°C unless otherwise noted a Parameter ...

Page 2

... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE Small Signal Characteristics * f Current Gain Dandwidth Product T * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2009 Fairchild Semiconductor Corporation MPSA77 Rev =25°C unless otherwise noted a Test Condition I = -100μ -30V ...

Page 3

... Typical Performance Characteristics © 2009 Fairchild Semiconductor Corporation MPSA77 Rev www.fairchildsemi.com ...

Page 4

... Typical Performance Characteristics (Continued) Power Dissipation vs Ambient Temperature 1.00 0. -92 0.50 0.25 0. © 2009 Fairchild Semiconductor Corporation MPSA77 Rev. B1 100 125 150 www.fairchildsemi.com ...

Page 5

... Mechanical Dimensions (TO-92) © 2009 Fairchild Semiconductor Corporation MPSA77 Rev. B1 Dimensions in Millimeters 5 www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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