LM3S1150-IQC50-A1 Luminary Micro, Inc., LM3S1150-IQC50-A1 Datasheet - Page 439

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LM3S1150-IQC50-A1

Manufacturer Part Number
LM3S1150-IQC50-A1
Description
Microcontroller
Manufacturer
Luminary Micro, Inc.
Datasheet
21.1.3
21.1.4
21.1.5
June 14, 2007
On-Chip Low Drop-Out (LDO) Regulator Characteristics
Table 21-3. LDO Regulator Characteristics
Power Specifications
The power measurements specified in the tables that follow are run on the core processor using
SRAM with the following specifications (except as noted):
Flash Memory Characteristics
Table 21-4. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Parameter
Parameter
Parameter
V
T
PE
T
V
LDOOUT
C
T
t
V
V
V
V
Temperature = 25°C
Clock Source (MOSC) =3.579545 MHz Crystal Oscillator
Main oscillator (MOSC) = enabled
Internal oscillator (IOSC) = disabled
ERASE
t
T
PROG
PON
t
I
OFF
STEP
RET
ON
LDO
OL
ME
DD
DD25
BAT
DDA
CYC
= 3.3 V
= 3.0 V
= 3.3 V
= 2.50 V
Parameter Name
Low-level sink current, V
Parameter Name
Programmable internal (logic) power supply output value
Output voltage accuracy
Power-on time
Time on
Time off
Step programming incremental voltage
External filter capacitor size for internal power supply
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C
Word program time
Page erase time
Mass erase time
Luminary Micro Confidential-Advance Product Information
OL
=0.4 V
2-mA Drive
4-mA Drive
8-mA Drive
Min
2.0
4.0
8.0
2.25
Min
a
-
-
-
-
-
-
10,000
Nom
Min
200
-
-
-
10
20
20
Nom
2.5
2%
50
1
-
-
-
100,000
Max
2.75
100
200
100
Max
Nom
-
-
-
-
-
-
-
-
-
-
Unit
mV
µs
µs
µs
µF
%
V
LM3S1150 Microcontroller
mA
mA
mA
Max
Unit
-
-
-
-
-
cycles
years
Unit
ms
ms
µs
439

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