GT8G132 Toshiba Semiconductor, GT8G132 Datasheet - Page 2

• Manufacturer Part Number: GT8G132
• Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Marking
Note 2: Drive operation: Mount on glass epoxy board [1 inch
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
GT8G132
Characteristics
※
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Rise time
Turn-on time
Fall time
Turn-off time
Type
(Note 2)
※ Lot Number
(Ta
V
V
Symbol
R
GE (OFF)
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
CE (sat)
I
I
C
th (j-a)
25°C)
GES
CES
t
t
on
off
t
t
ies
r
f
V
V
I
I
V
C
C
GE
CE
CE
4 V
1 mA, V
150 A, V
0
V
Duty cycle
IN
400 V, V
10 V, V
2
6 V, V
: t
t
r
f
Test Condition
CE
2
GE
100 ns
100 ns
GE
CE
GE
1.5 t]
1%
5 V
51
4 V
0
0, f
0
1 MHz
300 V
Min
0.6
2800
Typ.
2.3
1.0
1.1
1.6
2.2
GT8G132
2002-05-17
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Max
114
1.2
7.0
10
10
°C/W
Unit
pF
V
V
A
A
s
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