GT8G132 Toshiba Semiconductor, GT8G132 Datasheet - Page 3

• Manufacturer Part Number: GT8G132
• Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

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200
160
120
200
160
120
200
160
120
80
40
80
40
80
40
0
0
0
0
0
0
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
5.0
Tc
Gate-emitter voltage V
1
1
1
4.5
5.0
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40°C
4.0
4.5
2
4.0
2
2
I
I
I
C
C
C
– V
– V
– V
25
CE
CE
GE
125
3
3
3
V GE
V GE
3.5
GE
70
3.0
Common emitter
Tc
Common emitter
Tc
Common emitter
V CE
3.0
2.5 V
2.5 V
(V)
4
70°C
4
4
40°C
5 V
3.5
5
5
5
3
200
160
120
200
160
120
2.5
1.5
0.5
80
40
80
40
0
0
3
1
2
0
0
0
80
Common emitter
V GE
4 V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
40
5.0
1
1
Case temperature Tc (°C)
5.0
4.5
0
V
4.0
4.5
CE (sat)
2
2
I
I
C
C
– V
– V
4.0
40
I C
CE
CE
– Tc
3
3
150 A
V GE
80
V GE
3.5
Common emitter
Tc
Common emitter
Tc
2.5 V
2.5 V
3.0
4
125°C
4
25°C
120
3.0
GT8G132
120
2002-05-17
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90
60
3.5
160
5
5
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