GT8G132 Toshiba Semiconductor, GT8G132 Datasheet - Page 4

• Manufacturer Part Number: GT8G132
• Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

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1.4
1.2
0.8
0.6
0.4
0.2
5
4
3
2
1
0
5
4
3
2
1
0
1
0
0
0
80
Common emitter
Tc
Common emitter
Tc
70°C
40°C
40
90
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
1
90
Case temperature Tc (°C)
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0
V
60
GE (OFF)
V
V
2
2
CE
CE
40
– V
– V
I C
GE
GE
– Tc
150 A
60
I C
3
3
80
150 A
Common emitter
V CE
I C
120
1 mA
120
4
4
120
5 V
160
5
5
4
10000
1000
100
10
5
4
3
2
1
0
5
4
3
2
1
0
0
0
1
Common emitter
Tc
Common emitter
Tc
25°C
125°C
Collector-emitter voltage V CE (V)
90
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
1
C res
90
10
C oes
V
V
2
2
C – V
CE
CE
– V
– V
60
CE
I C
GE
GE
3
3
I C
150 A
100
150 A
60
Common emitter
V GE
f
Tc
C ies
1 MHz
120
120
25°C
4
4
0 V
GT8G132
2002-05-17
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1000
5
5
4U
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