GT8G132 Toshiba Semiconductor, GT8G132 Datasheet - Page 5

• Manufacturer Part Number: GT8G132
• Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

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0.1
200
160
120
0.1
10
10
80
40
1
1
0
0
1
0
Gate-emitter voltage V GE (V)
t r
Minimum Gate Drive Area
50
t f
Gate resistance R G ( )
2
Collector current I C (A)
Tc
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Switching Time – I
Switching Time – R
t on
10
25°C
t off
t r
100
4
70
Common emitter
V CC
V GE
R G
Tc
100
t off
CP
Common emitter
V CE
V GE
I C
Tc
G
25°C
150
51
6
150 A
300 V
4 V
25°C
300 V
4 V
t f
t on
1000
200
8
5
800
600
400
200
500
400
300
200
100
0
0
0
0
V CM
Tc
V GE
10
70°C
4.0 V
R G
350 V
V GE
40
Peak collector current I CP (A)
Maximum Operating Area
20
300
Gate charge Q G (nC)
V CE
V
CE
80
, V
40
GE
– Q
120
Common emitter
V CC
R L
Tc
G
25°C
2.0
60
300 V
160
GT8G132
2002-05-17
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200
80
10
8
6
4
2
0
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