GT60M323 Toshiba, GT60M323 Datasheet - Page 3

• Manufacturer Part Number: GT60M323
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

120
100
120
100
80
60
40
20
80
60
40
20
0
0
4
3
2
1
0
−60
0
0
Common
emitter
Tc = -40°C
Common
emitter
Tc = 125°C
Common
emitter
V GE = 15 V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
−20
1
1
V GE = 20 V
Case temperature Tc (°C)
V
10
15
20
CE (sat)
2
2
I
I
C
C
V GE = 20 V
– V
– V
CE
CE
– Tc
60
3
3
9
8
7
6
7
6
15
100
9
8
4
4
I C = 10 A
10
80
60
30
140
5
5
3
120
100
80
60
40
20
80
60
40
20
0
0
0
0
Common
emitter
Tc = 25°C
Common
emitter
V CE = 5V
Collector-emitter voltage V CE (V)
Gate-emitter voltage V GE (V)
1
2
V GE = 20 V
2
4
I
I
C
C
10
15
Tc = 125°C
25
– V
– V
CE
GE
3
6
−40
9
8
7
6
8
4
GT60M323
2004-07-06
10
5