GT60M323 Toshiba, GT60M323 Datasheet - Page 4

• Manufacturer Part Number: GT60M323
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

1000
0.01
200
150
100
100
0.1
50
10
10
0
1
1
0
1
1
Common emitter
V CC = 600 V
I C = 60 A
V GG =
Tc = 25°C
(continuous)
I C max (pulsed)*
I C max
operation
DC
V CE = 150 V
Collector- emitter voltage V CE (V)
±
50
t on
t off
Common emitter
R L = 2.5 Ω
Tc = 25°C
15 V
t r
t f
60
10
Gate resistance R G (
Gate charge Q G
Switching Time – R
Safe Operating Area
100
10
V
1 ms*
CE
10 ms
, V
100 µs*
*
120
100
GE
– Q
* Single non-repetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
100
10 µs*
G
(nC)
G
Ω
1000
180
)
10000
1000
240
20
15
10
5
0
4
10000
1000
1000
0.01
100
100
0.1
10
10
10
1
1
1
0
1
Common emitter
V CC = 600 V
R G = 51
V GG =
Tc = 25°C
t off
t on
t f
t r
10
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
±
Ω
15 V
10
10
Collector current I C (A)
20
Switching Time – I
Reverse Bias SOA
30
C – V
100
100
CE
40
C oes
C ies
C res
C
50
1000
1000
T j < = 125°C
V GG = 20 V
R G = 10 Ω
Common
emitter
V GE = 0
f = 1 MHz
Tc = 25°C
GT60M323
60
2004-07-06
10000
10000
70