GT60M323 Toshiba, GT60M323 Datasheet - Page 5

• Manufacturer Part Number: GT60M323
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

100
1.6
1.2
0.8
0.4
0.0
70
60
50
40
30
20
10
80
60
40
20
0
0
25
0
0
Common
collector
t
I
rr
rr
0.4
50
40
Case temperature
Forward voltage V F (V)
Tc = 125°C
0.8
t
I
75
80
di/dt (A/µs)
rr
C
, I
max – Tc
I
F
rr
−40
1.2
– V
– di/dt
F
25
100
120
Tc
1.6
Common collector
I F = 60 A
Tc = 25°C
Common emitter
V GE = 15 V
(°C)
125
160
2.0
150
180
2.4
80
60
40
20
0
5
10
10
10
10
10
1.6
1.4
1.2
1.0
0.8
10
− 1
− 2
2
1
0
0
− 5
Common Collector
di/dt = −20 A/µs
Tc = 25°C
Tc = 25°C
10
− 4
20
10
Forward current I F (A)
− 3
Pulse width t w (s)
R
10
t
rr
th (t)
− 2
, I
rr
40
– I
– t
10
− 1
F
w
10
Diode stage
IGBT stage
0
60
t
I
rr
rr
GT60M323
10
1
2004-07-06
10
80
18
16
14
12
10
2