EM638165 Etron Technology Inc., EM638165 Datasheet - Page 8

• Manufacturer Part Number: EM638165
• Description: 4Mega x 16 Synchronous DRAM (SDRAM)
• Manufacturer: Etron Technology Inc.

Preliminary
5
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ's
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ's
CL K
ADDRESS
COMMAND
CAS# latency=2
t CK2 , DQ's
CAS# latency=3
t CK3 , DQ's
: "H" or "L"
: "H" or "L"
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.
Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address)
the read operation. Once this command is given, any subsequent command cannot occur within a
time delay of {t
this command and the auto precharge function is ignored.
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
The Read and AutoPrecharge command automatically performs the precharge operation after
READ A
Col A
Bank,
T0
T0
T0
NOP
NOP
Read to Write Interval
Read to Write Interval
RP
(min.) + burst length}. At full-page burst, only the read operation is performed in
T 1
T 1
T 1
NOP
NOP
NOP
Read to Precharge
ACTIVATE
BANKA
READ A
DOUT A 0
T2
T2
T2
NOP
T3
T3
DOUT A 0
T3
NOP
NOP
DOUT A 1
(Burst Length
(Burst Length
NOP
8
(CAS# Latency = 2, 3)
READ A
Bank(s)
Precharge
DOUT A 2
T4
T4
NOP
T4
DOUT A 1
1 Clk Interval
4, CAS# Latency = 2)
WRITE B
4, CAS# Latency = 2)
WRITE A
T5
T5
DOUT A 2
DIN A 0
DIN B 0
T5
DOUT A 3
NOP
t
RP
DIN A 1
DIN B 1
T6
NOP
T6
NOP
DOUT A 3
T6
NOP
Rev 0.6
EM638165
T7
T7
DIN A 2
DIN B 2
Activate
NOP
NOP
T7
Bank,
Row
Feb. 2001
DIN A 3
DIN B 3
NOP
NOP
T8
T8
NOP
T8