FDW2502 Fairchild Semiconductor, FDW2502 Datasheet

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FDW2502

Manufacturer Part Number
FDW2502
Description
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW2502P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Load switch
Motor drive
DC/DC conversion
Power management
J
DSS
GSS
D
, T
J A
Device Marking
STG
2502P
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
FDW2502P
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
–4.4 A, –20 V. R
Extended V
High performance trench technology for extremely
Low profile TSSOP-8 package.
low R
DS(ON)
1
2
3
4
.
GSS
Tape width
R
range (±12V) for battery applications.
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
–4.4
–20
–30
125
208
1.0
0.6
12
= 0.035
= 0.057
PRELIMINARY
@ V
@ V
8
7
6
5
GS
GS
FDW2502P Rev. C1 (W)
May 2000
= –4.5 V
= –2.5 V.
3000 units
Quantity
Units
C/W
W
V
V
A
C

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FDW2502 Summary of contents

Page 1

... C unless otherwise noted A Ratings (Note 1a) (Note 1a) (Note 1b) -55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm May 2000 PRELIMINARY = 0.035 @ V = –4 0.057 @ V = –2 Units – –4.4 A –30 1.0 W 0.6 C 125 C/W 208 Quantity 3000 units FDW2502P Rev. C1 (W) ...

Page 2

... CA Min Typ Max Units –20 V –17 mV/ C –1 A –100 nA 100 nA –0.4 -1.0 –1.5 V 3.1 mV/ C 0.028 0.035 0.039 0.056 0.043 0.057 – 1330 pF 552 pF 153 100 3.0 nC 3.9 nC –0.83 A -0.7 –1.2 V FDW2502P Rev. C1 (W) ...

Page 3

... Source Current and Temperature -2.5V GS -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -4 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2502P Rev 1.4 ...

Page 4

... RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( =208 °C/W JA P(pk ( Duty Cycle 100 1000 FDW2502P Rev. C1 (W) ...

Page 5

TSSOP-8 Package Dimensions TSSOP-8 (FS PKG Code S4) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in millimeters Part Weight per unit (gram): 0.0334 January 2000, Rev. B ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ ...

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