FDD6676 Fairchild Semiconductor, FDD6676 Datasheet - Page 5

• Manufacturer Part Number: FDD6676
• Description: 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
0.1
Figure 9. Maximum Safe Operating Area
10
0
1
Figure 7. Gate Charge Characteristics
0.1
I
R
D
SINGLE PULSE
0.001
DS(ON)
R
= 16.8A
10
0.01
V
0.1
JA
T
GS
A
0.0001
1
= 96
= 25
LIMIT
= 10V
20
o
o
C/W
C
D = 0.5
V
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
30
Q
0.02
1
g
, GATE CHARGE (nC)
DC
0.01
SINGLE PULSE
40
0.001
10s
1s
50
Figure 11. Transient Thermal Response Curve
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
DS
10ms
60
= 5.0V
10
1ms
0.01
70
100 s
15V
80
10V
100
90
0.1
t
1
, TIME (sec)
7000
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics
0
1
Figure 10. Single Pulse Maximum
0.01
5
V
DS
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
10
10
0.1
C
t
C
C
1
RSS
, TIME (sec)
ISS
OSS
15
P(pk)
Duty Cycle, D = t
T
R
J
1
R
JA
- T
100
(t) = r(t) + R
JA
A
t
20
1
= 96
= P * R
t
2
SINGLE PULSE
R
o
T
JA
C/W
A
10
f = 1 MHz
V
= 96°C/W
= 25°C
JA
GS
1
FDD6676 Rev. C(W)
JA
(t)
25
/ t
= 0 V
2
1000
100
30